Light emitting diode chip

US8872209B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Markus Maute · Alteglofsheim, DE
• Karl Engl · Niedergebraching, DE
• Stefanie Rammelsberger · Zeitlarn, DE
• Nikolaus Gmeinwieser · Donaustauf, DE
• Johann Eibl · Wien, AT

Key dates

• Filing date: Feb 15, 2011
• Grant date: Oct 28, 2014
• Expiry date: May 3, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/853

Abstract

A light emitting diode chip includes a semiconductor layer sequence, the semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side. At a rear side lying opposite the radiation exit area, the light emitting diode chip has, at least in regions, a mirror layer containing silver. A functional layer that reduces corrosion and/or improves adhesion of the mirror layer is arranged on the mirror layer, wherein a material from which the functional layer is formed is also distributed in the entire mirror layer. The material of the functional layer has a concentration gradient in the mirror layer, wherein the concentration of the material of the functional layer in the mirror layer decreases proceeding from the functional layer in the direction toward the semiconductor layer sequence.