Nitride semiconductor device
US8872227B2 · kind B2 · utility
3Cited by
1References
22Claims
0Family size
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Key dates
| Filing date | Feb 22, 2012 |
| Grant date | Oct 28, 2014 |
| Priority date | — |
| Expiry date | Nov 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/343
Abstract
A nitride semiconductor device includes a semiconductor substrate, and a nitride semiconductor layer formed on the semiconductor substrate. The semiconductor substrate includes a normal region and an interface current block region surrounding the normal region. The nitride semiconductor layer includes an element region and an isolation region surrounding the element region. The element region is formed over the normal region. The interface current block region contains impurities, and forms a potential barrier against carriers generated at an interface between the nitride semiconductor layer and the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.