Memristor using a transition metal nitride insulator
US8872246B1 · kind B1 · utility
18Cited by
1References
15Claims
0Family size
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Key dates
| Filing date | Jan 25, 2013 |
| Grant date | Oct 28, 2014 |
| Priority date | — |
| Expiry date | Jan 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/026
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Apparatus is disclosed in which at least one resistive switching element is interposed between at least a first and a second conducting electrode element. The resistive switching element comprises a metal oxynitride. A method for making such a resistive switching element is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.