Three-dimensional semiconductor memory devices and methods of fabricating the same
US8872256B2 · kind B2 · utility
23Cited by
1References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 12, 2013 |
| Grant date | Oct 28, 2014 |
| Priority date | — |
| Expiry date | Mar 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
Abstract
A three-dimensional (3D) semiconductor memory device includes an electrode separation pattern, a stack structure, a data storage layer, and a channel structure. The electrode separation pattern is disposed on a substrate. A stack structure is disposed on a sidewall of the electrode separation pattern. The stack structure includes a corrugated sidewall opposite to the sidewall of the electrode separation pattern. The sidewall of the electrode separation pattern is vertical to the substrate. A data storage layer is disposed on the corrugated sidewall. A channel structure is disposed on the charge storage layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.