Patent · US Active

Sensing environmental parameter through stress induced in IC

US8872290B2 · kind B2 · utility

2Cited by
6References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 30, 2009
Grant dateOct 28, 2014
Priority date
Expiry dateJun 23, 2030

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01D5/183
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A sensor is provided for sensing a value of a physical parameter characteristic of the sensor's environment. The sensor is implemented in semiconductor technology. A behavior of the sensor's electronic circuitry is affected by stress. The stress is induced by a film covering the circuitry or only part thereof. The stress is caused by the film's material, whose dimensions depend on a value of the parameter. This dependence is different from the 5 dependence of the circuitry's substrate on the same parameter.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.