Patent · US Active

Push-pull magnetoresistive sensor bridges and mass fabrication method

US8872292B2 · kind B2 · utility

0Cited by
1References
13Claims
0Family size

Inventors

Key dates

Filing dateMar 2, 2012
Grant dateOct 28, 2014
Priority date
Expiry dateMar 2, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2224/48464
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A multi-chip push-pull magnetoresistive bridge sensor utilizing magnetic tunnel junctions is disclosed. The magnetoresistive bridge sensor is composed of a two or more magnetic tunnel junction sensor chips placed in a semiconductor package. For each sensing axis parallel to the surface of the semiconductor package, the sensor chips are aligned with their reference directions in opposition to each other. The sensor chips are then interconnected as a push-pull half-bridge or Wheatstone bridge using wire bonding. The chips are wire-bonded to any of various standard semiconductor lead frames and packaged in inexpensive standard semiconductor packages.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.