Sensor and measurement method
US8872520B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2011 |
| Grant date | Oct 28, 2014 |
| Priority date | — |
| Expiry date | Jan 2, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/4148
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention relates to a sensor comprising a substrate (10) carrying a field effect transistor (30) having a gate electrode (32), the sensor further comprising a measurement electrode (36) spatially separated from the gate electrode; and a reference electrode (40), said measurement electrode being in configurable conductive contact with said gate electrode, the sensor further comprising a charge storage element (60) comprising a first electrode connected to a node (38) between the measurement electrode and the gate electrode; and a second electrode configurably connected to a known potential source (80). The present invention further relates to a method of performing a measurement with such a sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.