Patent · US Active

High-side semiconductor-switch low-power driving circuit and method

US8872552B2 · kind B2 · utility

3Cited by

22References

24Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Michael Asam · Aichach, DE
Helmut Herrmann · Hersbruck, DE

Key dates

Filing date	Sep 29, 2012
Grant date	Oct 28, 2014
Priority date	—
Expiry date	Sep 29, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH03K2217/0081
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A high-side semiconductor-switch driving method includes generating power for controlling a high side semiconductor switch. The high side semiconductor switch has a control terminal and the power allows a current to flow into the control terminal of the high side semiconductor switch to switch the high side semiconductor switch. The voltage at the control terminal of the high side semiconductor switch is quantified. The power dependent on the voltage at the control terminal of the high side semiconductor switch is controlled so that the current provided is increased when the voltage at the control terminal indicates that the current is not sufficient to switch the high side semiconductor switch.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.