Non-volatile memory device capable of multi-page programming by simultaneously activating a plurality of selection lines based on programmed data
US8873290B2 · kind B2 · utility
4Cited by
4References
20Claims
0Family size
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Key dates
| Filing date | Mar 26, 2014 |
| Grant date | Oct 28, 2014 |
| Priority date | — |
| Expiry date | Mar 26, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3459
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of programming a non-volatile memory device including a plurality of strings arranged in rows and columns comprises activating all or a part of selection lines in one column at the same time depending upon data to be programmed, driving a bit line corresponding to the one column with a bit line program voltage, and repeating the activating and the driving until bit lines corresponding to the columns are all driven.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.