Silicon-containing resist underlayer film forming composition having fluorine-based additive
US8877425B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2011 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Dec 26, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08G77/26
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist underlayer film forming composition for lithography includes: as a component (I), a fluorine-containing highly branched polymer obtained by polymerizing a monomer A having two or more radical polymerizable double bonds in the molecule thereof, a monomer B having a fluoroalkyl group and at least one radical polymerizable double bond in the molecule thereof, and a monomer D having a silicon atom-containing organic group and at least one radical polymerizable double bond in the molecule thereof, in the presence of a polymerization initiator C in a content of 5% by mole or more and 200% by mole or less, based on the total mole of the monomer A, the monomer B, and the monomer D; and as a component (II), a hydrolyzable silane compound, a hydrolysis product thereof, a hydrolysis-condensation product thereof, or a silicon-containing compound that is a combination of these compounds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.