Ferroelectric film containing a perovskite structure oxide and method for manufacturing a ferroelectric film
US8877520B2 · kind B2 · utility
1Cited by
1References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2013 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Jan 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/8554
Abstract
A method for manufacturing a ferroelectric film including the steps of forming a burnable material film containing hydrogen of not less than 1% by weight on a substrate; forming an amorphous thin film including a ferroelectric material on the burnable material film; and oxidizing and crystallizing the amorphous thin film while supplying hydrogen to the amorphous thin film by burning the burnable material film through heating of the burnable material film and the amorphous thin film in an oxygen atmosphere, to thereby form a first ferroelectric film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.