Patent · US Active

Method for manufacturing MEMS device

US8877537B2 · kind B2 · utility

3Cited by
3References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 19, 2011
Grant dateNov 4, 2014
Priority date
Expiry dateMay 19, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03H3/0072
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A method for manufacturing a micro-electro-mechanical system (MEMS) device is provided. The method comprises: providing a semiconductor substrate, the semiconductor substrate having a metal interconnection structure (100) formed therein; forming a first sacrificial layer (201) on the surface of the semiconductor substrate, the material of the first sacrificial layer is amorphous carbon; etching the first sacrificial layer to form a first recess (301); covering and forming a first dielectric layer (401) on the surface of the first sacrificial layer; thinning the first dielectric layer by a chemical mechanical polishing (CMP) process, until exposing the first sacrificial layer; forming a micromechanical structure layer (500) on the surface of the first sacrificial layer and exposing the first sacrificial layer, wherein a part of the micromechanical structure layer is connected to the first dielectric layer. The method avoids polishing the amorphous carbon, shortens the period of production, and improves the production efficiency.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.