Semiconductor device and manufacturing method thereof
US8877577B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 27, 2012 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Aug 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method for manufacturing the same are provided. A substrate with an active area and a first interlayer dielectric formed over the substrate is provided. The first interlayer dielectric has a first opening exposing a portion of a surface of the active area, the first opening being filled with a fill material. A second interlayer dielectric is formed over the first interlayer dielectric with a second opening substantially exposing an upper portion of the fill material in the corresponding first opening. The fill material is then removed and the first opening and the second opening are filled with a conductive material to form a contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.