Semiconductor device and manufacturing method involving multilayer contact etch stop
US8877651B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2011 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Aug 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes forming a contact etch stop layer on an active area of a substrate that has a gate stack formed thereon. The gate stack includes a metal gate and a metal oxide. The contact etch stop layer includes a silicon oxide layer sandwiched between a first silicon nitride layer and a second silicon nitride layer that is disposed on the active area. The method further includes forming a contact hole extending through an interlayer dielectric layer on the first silicon nitride layer using the first silicon nitride layer as a protection for the active area, removing a portion of the first silicon nitride layer disposed at the bottom of the contact hole using the silicon oxide layer as a protection for the active area, and removing the metal oxide using the second silicon nitride layer as a protection for the active area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.