Process for producing semiconductive layers
US8877657B2 · kind B2 · utility
0Cited by
1References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2010 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Dec 6, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0241
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a process for producing a layer comprising at least one semiconductive metal oxide on a substrate, comprising at least the steps of:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.