Tunnel diodes incorporating strain-balanced, quantum-confined heterostructures
US8878161B2 · kind B2 · utility
2Cited by
2References
6Claims
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Key dates
| Filing date | Mar 6, 2014 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Mar 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/824
Abstract
A strain-balanced quantum well tunnel junction (SB-QWTJ) device. QW structures are formed from alternating quantum well and barrier layers situated between n++ and p++ layers in a tunnel junction formed on a substrate. The quantum well layers exhibit a compressive strain with respect to the substrate, while the barrier layers exhibit a tensile strain. The composition and layer thicknesses of the quantum well and barrier layers are configured so that the compressive and tensile strains in the structure are balanced.
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