Oxide semiconductor, thin film transistor, and display device
US8878172B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2009 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Sep 4, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An object is to control composition and a defect of an oxide semiconductor, another object is to increase a field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with a reduced off current. A solution is to employ an oxide semiconductor whose composition is represented by InMO3(ZnO)m, where M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and m is preferably a non-integer number of greater than 0 and less than 1. The concentration of Zn is lower than the concentrations of In and M. The oxide semiconductor has an amorphous structure. Oxide and nitride layers can be provided to prevent pollution and degradation of the oxide semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.