Patent · US Active

Light emitting device, method of manufacturing the light emitting device, light emitting device package, and lighting system

US8878212B2 · kind B2 · utility

0Cited by
0References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 3, 2011
Grant dateNov 4, 2014
Priority date
Expiry dateNov 18, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/181

Abstract

A light emitting device includes a substrate, at least one electrode, a first contact layer, a second contact layer, a light emitting structure layer, and an electrode layer. The electrode is disposed through the substrate. The first contact layer is disposed on a top surface of the substrate and electrically connected to the electrode. The second contact layer is disposed on a bottom surface of the substrate and electrically connected to the electrode. The light emitting structure layer is disposed above the substrate at a distance from the substrate and electrically connected to the first contact layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The electrode layer is disposed on the light emitting structure layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.