Semiconductor light-emitting device and method for manufacturing the same
US8878218B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2013 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Oct 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
The invention provides semiconductor light-emitting devices which have a semiconductor layer on a principal surface of a translucent substrate and a reflective layer on a second principal surface opposite to the principal surface having the semiconductor layer, which enables that the peeling of the reflective layer from the translucent substrate is suppressed. A semiconductor light-emitting device includes a first metal layer disposed in contact with a second principal surface of a translucent substrate, a second metal layer disposed in contact with at least the second principal surface or a side surface of the translucent substrate around the first metal layer, and a third metal layer disposed on the second metal layer. The first metal layer has a reflectance with respect to a peak wavelength of light emitted from an emitting layer higher than the reflectance of the second metal layer. The second metal layer has an adhesion with respect to the translucent substrate higher than the adhesion between the first metal layer and the translucent substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.