Light emitting diode with a temperature detecting pattern and manufacturing method thereof
US8878222B2 · kind B2 · utility
3Cited by
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20Claims
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Key dates
| Filing date | Mar 14, 2012 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Jan 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/858
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A light emitting diode (LED) includes a substrate, a temperature detecting pattern, and a semiconductor structure. The temperature detecting pattern is formed on the substrate. Then the semiconductor structure is formed on the temperature detecting pattern and the substrate. The semiconductor structure includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer. Per above-mentioned structural design, the temperature detecting pattern directly integrated into the LED can measure the actual temperature of PN junction with high precision.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.