Compound semiconductor devices and methods of fabricating the same
US8878233B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Oct 26, 2011 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Oct 26, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/734
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a compound semiconductor device and a manufacturing method thereof. A substrate and a graphene oxide layer are provided on the substrate. A first compound semiconductor layer is provided on the graphene oxide layer. The first compound semiconductor layer is selectively grown from the substrate exposed by the graphene oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.