Semiconductor devices
US8878253B2 · kind B2 · utility
0Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 3, 2011 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Feb 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A semiconductor device and method of manufacturing a semiconductor device include a plurality of first active regions and a second active region being formed on a substrate. The second active region is formed between two of the first active regions. A plurality of gate structures is formed on respective first active regions. A dummy gate structure is formed on the second active region, and a first voltage is applied to the dummy gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.