Solid-state imaging device
US8878267B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 27, 2011 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Jun 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
A purpose of the present invention is to provide a preferable separation structure of wells when a photoelectric conversion unit and a part of a peripheral circuit unit or a pixel circuit are separately formed on separate substrates and electrically connected to each other. To this end, a solid-state imaging device includes a plurality of pixels including a photoelectric conversion unit and a amplification transistor configured to amplify a signal generated by the photoelectric conversion unit; a first substrate on which a plurality of the photoelectric conversion units are disposed; and a second substrate on which a plurality of the amplification transistors are disposed. A well of a first conductivity type provided with a source region and a drain region of the amplification transistor is separated from a well, which is disposed adjacent to the well in at least one direction, of the first conductivity type provided with the source region and the drain region of the amplification transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.