Microelectronic pressure sensor
US8878790B2 · kind B2 · utility
6Cited by
12References
26Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 10, 2008 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Feb 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48091
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A microelectronic pressure sensor comprises a MOSFET transistor adapted with a mobile gate and a cavity between the mobile gate and a substrate. The sensor includes a gate actuator configured to move mobile gate in response to a pressure being exercised. A fingerprint recognition system includes a matrix of such sensors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.