CMOS RF switch device and method for biasing the same
US8880014B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2010 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | May 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/7215
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Disclosed are CMOS-based devices for switching radio frequency (RF) signals and methods for biasing such devices. In certain RF devices such as mobile phones, providing different amplification modes can yield performance advantages. For example, a capability to transmit at low and high power modes typically results in an extended battery life, since the high power mode can be activated only when needed. Switching between such amplification modes can be facilitated by one or more switches formed in an integrated circuit and configured to route RF signal to different amplification paths. In certain embodiments, such RF switches can be formed as CMOS devices, and can be based on triple-well structures. In certain embodiments, an isolated well of such a triple-well structure can be provided with different bias voltages for on and off states of the switch to yield desired performance features during switching of amplification modes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.