Apparatus for manufacturing silicon carbide single crystal
US8882911B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2011 |
| Grant date | Nov 11, 2014 |
| Priority date | — |
| Expiry date | Oct 18, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1008
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for manufacturing a silicon carbide single crystal grows the silicon carbide single crystal on a seed crystal by supplying a material gas from below the seed crystal. The apparatus includes a heating container and a base located in the heating container. The seed crystal is mounded on the base. The apparatus further includes a first inlet for causing a purge gas to flow along an inner wall surface of the heating container, a purge gas source for supplying the purge gas to the first inlet, a second inlet for causing the purge gas to flow along an outer wall surface of the base, and a mechanism for supporting the base and for supplying the purge gas to the base from below the base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.