Substrate processing apparatus and method of manufacturing semiconductor device
US8882923B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2012 |
| Grant date | Nov 11, 2014 |
| Priority date | — |
| Expiry date | Nov 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing apparatus includes: a process chamber having an object to be heated therein and configured to process a plurality of substrates; a substrate holder configured to hold the substrates with an interval therebetween in a vertical direction in the process chamber; a first heat exchange unit supporting the substrate holder from a lower side thereof in the process chamber and configured to perform a heat exchange with a gas in the process chamber; a second heat exchange unit provided in the process chamber, the second heat exchange unit being horizontally spaced apart from the first heat exchange unit with a gap therebetween and being configured to perform a heat exchange with the gas in the process chamber; and an induction heating unit configured to subject the object to be heated to an induction heating from an outer side of the object to be heated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.