Compound semiconductor device and method for manufacturing the same
US8883581B2 · kind B2 · utility
15Cited by
3References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 20, 2013 |
| Grant date | Nov 11, 2014 |
| Priority date | — |
| Expiry date | Jun 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A compound semiconductor device includes a compound semiconductor composite structure in which two-dimensional electron gas is generated; and an electrode that is formed on the compound semiconductor composite structure, wherein the compound semiconductor composite structure includes a p-type semiconductor layer below a portion where the two-dimensional electron gas is generated, and the p-type semiconductor layer includes a portion containing a larger amount of an ionized acceptor than other portions of the p-type semiconductor layer, the portion being located below the electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.