Method of manufacturing semiconductor device and semiconductor manufacturing apparatus
US8883642B2 · kind B2 · utility
1Cited by
6References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2013 |
| Grant date | Nov 11, 2014 |
| Priority date | — |
| Expiry date | Feb 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/35
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a method of manufacturing a semiconductor device includes forming a concave portion on a surface of a substrate to be processed. The method further includes forming a coating film on the substrate to embed the coating film in the concave portion. The method further includes performing a first heat treatment in an atmosphere including an oxidant which contains polar molecules. The method further includes performing a second heat treatment after the first heat treatment by irradiating the coating film with a microwave after or while exposing the coating film to a liquid or a gas containing polar molecules.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.