Nanopillar field-effect and junction transistors

US8883645B2 · kind B2 · utility

Assignee

• CALIFORNIA INSTITUTE OF TECHNOLOGY · US

Inventors

• Chieh-feng Chang · Taipei, TW
• Aditya Rajagopal · Irvine, US
• Axel Scherer · Laguna Beach, US

Key dates

• Filing date: Jul 12, 2013
• Grant date: Nov 11, 2014
• Expiry date: Jul 12, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/121

Abstract

Methods for fabrication of nanopillar field effect transistors are described. These transistors can have high height-to-width aspect ratios and be CMOS compatible. Silicon nitride may be used as a masking material. These transistors have a variety of applications, for example they can be used for molecular sensing if the nanopillar has a functionalized layer contacted to the gate electrode. The functional layer can bind molecules, causing an electrical signal in the transistor.