Patent · US Active

Multifunctional zinc oxide nano-structure-based circuit building blocks for re-configurable electronics and optoelectronics

US8884285B2 · kind B2 · utility

6Cited by

0References

10Claims

0Family size

Assignee

Rutgers, the State University of New Jersey · US

Inventors

Yicheng Lu · East Brunswick Township, US
Yang Zhang · San Diego, US
Chieh-Jen Ku · Hillsboro, US

Key dates

Filing date	Mar 1, 2013
Grant date	Nov 11, 2014
Priority date	—
Expiry date	Mar 1, 2033

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/53

Abstract

A vertically integrated reconfigurable and programmable diode/memory resistor (1D1R) and thin film transistor/memory resistor (1T1R) structures built on substrates are disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.