Patent · US Active

Inductor device and fabrication method

US8884399B2 · kind B2 · utility

3Cited by

8References

18Claims

0Family size

Assignee

Semiconductor Manufacturing International Corp. · CN

Inventors

Jenhao Cheng · Shanghai, CN
Xining Wang · Shanghai, CN
Ling Liu · Shanghai, CN

Key dates

Filing date	Nov 30, 2012
Grant date	Nov 11, 2014
Priority date	—
Expiry date	Feb 23, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Various embodiments provide inductor devices and fabrication methods. An exemplary inductor device can include a plurality of planar spiral wirings isolated by a dielectric layer. The planar spiral wirings can be connected by conductive pads formed over the dielectric layer and by conductive plugs formed in the dielectric layer. In one embodiment, a third planar spiral wiring can be formed over a second planar spiral wirings that is formed over a first planar spiral wiring. The third planar spiral wiring can be configured in parallel with the first third planar spiral wiring. The second planar spiral wiring can be configured in series with the first and third planar spiral wirings configured in parallel.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.