Patent · US Active

Semiconductor module

US8884634B2 · kind B2 · utility

2Cited by

1References

9Claims

0Family size

Assignee

Kabushiki Kaisha Toshiba · JP

Inventors

Kenji Hirohata · Tokyo, JP
Minoru Mukai · Tokyo, JP
Tomoko Monda · Yokohama, JP

Key dates

Filing date	Mar 26, 2012
Grant date	Nov 11, 2014
Priority date	—
Expiry date	May 18, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L23/64
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

According to one embodiment, a semiconductor module comprises a substrate, a first wiring, an electrode pad, a junction, an oscillator, and a detector. The first wiring is disposed on the substrate, and has a characteristic impedance Z0. The electrode pad is connected to the first wiring. The junction is disposed on the electrode pad, and has an impedance Z1. The oscillator is disposed in contact with the first wiring, and oscillates a pulse wave of a voltage toward the junction via the first wiring. The detector is disposed in contact with the first wiring, and detects an output wave of the pulse wave from the junction. The characteristic impedance Z0 and the impedance Z1 satisfy a following relationship (1),

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.