Patent · US Active

Method for producing silicon waveguides on non-SOI substrate

US8889017B2 · kind B2 · utility

0Cited by

10References

25Claims

0Family size

Assignee

National Taiwan University · TW

Inventors

Ching-Fuh Lin · Taipei, TW
Shih-Che Hung · Tainan, TW
Shu-Jia Syu · Taipei, TW

Key dates

Filing date	Apr 27, 2012
Grant date	Nov 18, 2014
Priority date	—
Expiry date	Aug 4, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02675
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present invention relates to a method for producing silicon waveguides on non-SOI substrate (non-silicon-on-insulator substrate), and particularly relates to a method for producing silicon waveguides on silicon substrate with a laser. This method includes the following steps: (1) forming a ridge structure with high aspect ratio on a non-SOI substrate; (2) melting and reshaping the ridge structure by laser illumination for forming a structure having broad upper part and narrow lower part; and (3) oxidizing the structure having broad upper part and narrow lower part to form a silicon waveguide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.