Etching composition
US8889025B2 · kind B2 · utility
0Cited by
22References
21Claims
0Family size
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Key dates
| Filing date | Jan 2, 2014 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Jan 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
This disclosure relates to a method for manufacturing a semiconductor device. The method includes etching a metal film on a semiconductor substrate with an etching composition; and rinsing the etched metal film with a rinse solvent. The etching composition includes at least one acid; at least one compound containing a halide anion, the halide anion being chloride or bromide; at least one compound containing a nitrate or nitrosyl ion; and water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.