n-Type doped PbTe and PbSe alloys for thermoelectric applications
US8889028B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | May 3, 2012 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Sep 12, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/40
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present invention demonstrates that weak scattering of carriers leads to a high mobility and therefore helps achieve low electric resistivity with high Seebeck coefficient for a thermoelectric material. The inventors demonstrate this effect by obtaining a thermoelectric figure of merit, zT, higher than 1.3 at high temperatures in n-type PbSe, because of the weak scattering of carriers in the conduction band as compared with that in the valence band. The invention further demonstrates favorable thermoelectric transport properties of n-type PbTe1-xIx with carrier concentrations ranging from 5.8×1018-1.4×1020 cm−3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.