Method of manufacturing transistor, transistor, array substrate and display device

US8889444B2 · kind B2 · utility

Assignee

• BOE Technology Group Co., Ltd. · CN

Inventor

• Chunsheng Jiang · Tangxia, CN

Key dates

• Filing date: Nov 28, 2012
• Grant date: Nov 18, 2014
• Expiry date: Nov 28, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D99/00

Abstract

Embodiments of the present invention provide a method for manufacturing a transistor, a transistor, an array substrate and a display device. The method comprises: forming a first source/drain metal layer on a substrate; forming an insulating layer above the first source/drain metal layer; forming a gate metal layer on the insulating layer; forming a gate insulating layer on the gate metal layer; forming a semiconductor layer above the gate insulating layer; forming an etching blocking layer on the semiconductor layer; forming a second source/drain metal layer above the etching blocking layer; forming an insulating layer above the second source/drain metal layer.