Method of optimizing the band edge positions of the conduction band and the valence band of a semiconductor material for use in photoactive devices
US8889467B2 · kind B2 · utility
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1References
33Claims
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Key dates
| Filing date | Oct 14, 2011 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Oct 12, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/542
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a semiconductor compound having the general formula AxB1-xCy, to a method of optimizing positions of a conduction band and a valence band of a semiconductor material using said semiconductor compound, and to a photoactive device comprising said semiconductor compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.