Method and device including transistor component having a field electrode

US8889512B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Joachim Krumrey · Eisenlohrsweg, AT
• Gerhard Noebauer · Villach, AT
• Martin Poelzl · Ossiach, AT
• Marc Probst · Radeberg, DE

Key dates

• Filing date: Oct 26, 2011
• Grant date: Nov 18, 2014
• Expiry date: Oct 24, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

A transistor component and method of forming a transistor component. One embodiment provides a semiconductor arrangement including a semiconductor body having a at least one first trench, a first field electrode arranged in the lower trench section of the at least one first trench and being insulated from the semiconductor body by a field electrode dielectric. A dielectric layer is formed on the first field electrode in the at least one first trench, including depositing a dielectric material on a first side of the semiconductor body and on the field plate at a higher deposition rate than on sidewalls of the at least one first trench.