Patent · US Active

Method for forming a dopant profile

US8889536B2 · kind B2 · utility

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20Claims

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Assignee

SCHOTT SOLAR AG · DE

Inventors

Gabriele Blendin · Gelnhausen, DE
Joerg Horzel · Glückstadt, DE
Agata Lachowicz · Erkrath, DE
Berthold Schum

Key dates

Filing date	Aug 30, 2011
Grant date	Nov 18, 2014
Priority date	—
Expiry date	Nov 25, 2031

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method is provided for forming a dopant profile based on a surface of a wafer-like semiconductor component with phosphorus as a dopant. The method includes the steps of applying a phosphorus dopant source onto the surface, forming a first dopant profile with the dopant source that is present on the surface, removing the dopant source, and forming a second dopant profile that has a greater depth in comparison to the first dopant profile. In order to form an optimized dopant profile, the dopant source is removed after forming the first dopant profile, and precipitates that are crystallized selectively on or in the surface from the precipitates SixPy and SixPyOz are removed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.