Photoelectric device
US8889981B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2012 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | May 18, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
A photoelectric device includes a first semiconductor structure and a second semiconductor structure on a substrate, and the first semiconductor structure includes a different conductivity type from the second semiconductor structure. The photoelectric device also includes a first electrode on the first semiconductor structure and a second electrode on the second semiconductor structure, and an interlayer insulating structure adjacent to the second semiconductor structure. The interlayer insulating structure separates the first semiconductor structure from the second semiconductor structure and separates the first semiconductor structure from the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.