Controlling ferroelectricity in dielectric films by process induced uniaxial strain

US8890112B2 · kind B2 · utility

Assignees

• International Business Machines Corporation · US
• CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE · FR

Inventors

• Catherine A. Dubourdieu · New York, US
• Martin M. Frank · Dobbs Ferry, US

Key dates

• Filing date: Jul 25, 2012
• Grant date: Nov 18, 2014
• Expiry date: Jan 3, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/143

Abstract

A method of controlling ferroelectric characteristics of integrated circuit device components includes forming a ferroelectrically controllable dielectric layer over a substrate; and forming a stress exerting structure proximate the ferroelectrically controllable dielectric layer such that a substantially uniaxial strain is induced in the ferroelectrically controllable dielectric layer by the stress exerting structure; wherein the ferroelectrically controllable dielectric layer comprises one or more of: a ferroelectric oxide layer and a normally non-ferroelectric material layer that does not exhibit ferroelectric properties in the absence of an applied stress.