Optoelectronic device with a wide bandgap and method of making same

US8890113B2 · kind B2 · utility

Inventors

• Nikolay Ledentsov · Berlin, DE
• James A. Lott · Maryville, US
• Vitaly Shchukin · Berlin, DE

Key dates

• Filing date: Jun 4, 2012
• Grant date: Nov 18, 2014
• Expiry date: Jun 4, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/773
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A light-emitting device epitaxially-grown on a GaAs substrate which contains an active region composed of AlxGa1-xAs alloy or of related superlattices of this materials system is disclosed. This active region either includes tensile-strained GaP-rich insertions aimed to increase the forbidden gap of the active region targeting the bright red, orange, yellow, or green spectral ranges, or is confined by regions with GaP-rich insertions aimed to increase the barrier height for electrons in the conduction band preventing the leakage of the nonequilibrium carriers outside of the light-generation region.