Vertical stacking of carbon nanotube arrays for current enhancement and control
US8890116B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2012 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Feb 16, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Transistor devices having vertically stacked carbon nanotube channels and techniques for the fabrication thereof are provided. In one aspect, a transistor device is provided. The transistor device includes a substrate; a bottom gate embedded in the substrate with a top surface of the bottom gate being substantially coplanar with a surface of the substrate; a stack of device layers on the substrate over the bottom gate, wherein each of the device layers in the stack includes a first dielectric, a carbon nanotube channel on the first dielectric, a second dielectric on the carbon nanotube channel and a top gate on the second dielectric; and source and drain contacts that interconnect the carbon nanotube channels in parallel. A method of fabricating a transistor device is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.