Solution composition for passivation layer, thin film transistor array panel, and manufacturing method for thin film transistor array panel
US8890139B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2012 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Jun 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/124
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A passivation layer solution composition is provided. A passivation layer solution composition according to an exemplary embodiment of the present invention includes an organic siloxane resin represented by Chemical Formula 1 below.In Chemical Formula 1, R is at least one substituent selected from a saturated hydrocarbon or an unsaturated hydrocarbon having from 1 to about 25 carbon atoms, and x and y may each independently be from 1 to about 200, and wherein each wavy line indicates a bond to an H atom or to an x siloxane unit or a y siloxane unit, or a bond to an x siloxane unit or a y siloxane unit of another siloxane chain comprising x siloxane units or y siloxane units or a combination thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.