Oxide electronic device and method for manufacturing the same
US8890142B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2013 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Feb 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
Provided is an oxide electronic device, including: an oxide substrate; an oxide thin film layer formed on the oxide substrate and containing an oxide that is heterogeneous with respect to the oxide substrate; and a ferroelectric layer formed on the oxide thin film layer and controlling electric conductivity of two-dimensional electron gas (2DEG) generated at an interface between the oxide substrate and the oxide thin film layer. Provided also is a method for manufacturing an oxide electronic device, including: depositing, on an oxide substrate, an oxide that is heterogeneous with respect to the oxide substrate to form an oxide thin film layer; and forming a ferroelectric layer on the oxide thin film layer, wherein the ferroelectric layer controls electric conductivity of 2DEG generated at an interface between the oxide substrate and the oxide thin film layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.