Patent · US Active

Silicon carbide substrate, semiconductor device and method for manufacturing silicon carbide substrate

US8890170B2 · kind B2 · utility

2Cited by

1References

9Claims

0Family size

Assignee

HOYA CORPORATION · JP

Inventors

Hiroyuki Nagasawa
Takamitsu Kawahara · Kawasaki, JP
Kuniaki Yagi · Tokyo, JP
Naoki Hatta · Tokyo, JP

Key dates

Filing date	Nov 15, 2011
Grant date	Nov 18, 2014
Priority date	—
Expiry date	Nov 15, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8325
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

There is provided a silicon carbide substrate composed of silicon carbide, including encapsulated regions inside, which form incoherent boundaries between the silicon carbide and the encapsulated regions, wherein propagation of stacking faults in the silicon carbide is blocked.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.