Field effect transistor
US8890210B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2012 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Nov 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
Abstract
A field effect transistor includes a nitride semiconductor multilayer structure formed on a substrate, a source electrode, a drain electrode, a gate electrode, an insulating film formed on the nitride semiconductor multilayer structure, and a field plate formed on and in contact with the insulating film, and having an end located between the gate electrode and the drain electrode. The insulating film includes a first film, and a second film having a dielectric breakdown voltage lower than that of the first film, and a thin film portion formed between the gate electrode and the drain electrode is formed in the insulating film. The field plate covers the thin film portion, and is connected to the source electrode in an opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.