Nonvolatile semiconductor memory device with a narrowing charge storage layer

US8890231B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventor

• Ryuji Ohba · Yokohama, JP

Key dates

• Filing date: Sep 5, 2012
• Grant date: Nov 18, 2014
• Expiry date: Sep 5, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/10

Abstract

According to one embodiment, a nonvolatile semiconductor memory device includes a first memory cell on the first fin-type active area, and a second memory cell on the second fin-type active area. Each of widths of charge storage layers of the first and second memory cells becomes narrower upward from below. Each of inter-electrode insulating layers of the first and second memory cells has a contact portion through which both are in contact with each other.