Semiconductor device and method for producing the same
US8890239B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2011 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Jul 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
In a vertical semiconductor device including a channel in an opening, a semiconductor device whose high-frequency characteristics can be improved and a method for producing the semiconductor device are provided. The semiconductor device includes n-type GaN-based drift layer 4/p-type GaN-based barrier layer 6/n-type GaN-based contact layer 7. An opening 28 extends from a top layer and reaches the n-type GaN-based drift layer. The semiconductor device includes a regrown layer 27 located so as to cover the opening, the regrown layer 27 including an electron drift layer 22 and an electron supply layer 26, a source electrode S, a drain electrode D, and a gate electrode G located on the regrown layer. Assuming that the source electrode serving as one electrode and the drain electrode serving as the other electrode constitute a capacitor, the semiconductor device includes a capacitance-decreasing structure that decreases the capacitance of the capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.